suzhou goodark electronics co., ltd version 1.0 gd ssf 2301a package marking and ordering information device marking device device package reel size tape width quantity 23 01 a ssf 23 01 a sot 23 ? 180mm 8 mm 3000 units absolute maximum rat i ngs(ta=25 unless ot herwise noted) parameter symbol limit unit drain - source voltage v ds - 2 0 v gate - source voltage v g s 12 v drain current - continuous@ current - pulsed (note 1) i d - 4 a i dm - 20 a maximum power dissipation p d 1 . 6 w operating junction and storage temperature range t j ,t stg - 55 to 150 thermal characteristics thermal resistance,junction - to - ambient (note 2) r ja 1 56 / w general features v ds = - 2 0v,i d = - 4 a r ds(on) < 80 m @ v gs = - 2.5v r ds(on) < 65 m @ v gs = - 4.5v high power and current handing capability lead free product is acquired surface mount package description the ssf 2301a uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. application pwm applications load switch power management schematic diagram marking and pin assignment sot23 top view d g s
suzhou goodark electronics co., ltd version 1.0 gd ssf 2301a electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain - source breakdown voltage bv dss v gs =0v i d = - 250a - 2 0 v zero gate voltage drain current i dss v ds = - 20 v,v gs =0v - 1 a gate - body leakage current i gss v gs = 12 v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d = - 250a - 0. 5 - 1 v drain - source on - state resistance r ds(on) v gs = - 4 .5v, i d = - 4 a 46 65 m v gs = - 2.5 v, i d = - 3 a 65 80 forward transconductance g fs v ds = - 5 v,i d = - 4 a 7 s dynamic characteristics (note4) input capacitance c lss v ds = - 10 v,v gs =0v, f=1.0mhz 640 pf output capacitance c oss 1 8 0 pf reverse transfer capacitance c rss 1 00 pf switching characteristics (note 4) turn - on delay time t d(on) v dd = - 10 v,i d = - 1 a v gs = - 4.5 v,r gen = 6 27 ns turn - on rise time t r 60 ns turn - off delay time t d(off) 30 ns turn - off fall time t f 10 ns total gate charge q g v ds = - 10 v,i d = - 4 a,v gs = - 4.5v 9.6 nc gate - source charge q gs 1.5 nc gate - drain charge q gd 2.4 nc drain - source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s = - 1 a - 1 .2 v notes: 1. repetitive rati ng: pulse width limited by maximum junction temperature. 2. surface moun ted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
suzhou goodark electronics co., ltd version 1.0 gd ssf 2301a typical electrical and thermal characteristics square wave pluse duration(se c) figure 3: normalized maximum transient thermal impedance v i n v o u t 1 0 % 1 0 % 5 0 % 5 0 % p u l s e w i d t h i n v e r t e d t d ( o n ) 9 0 % t r t o n 9 0 % 1 0 % t o f f t d ( o f f ) t f 9 0 % v i n v o u t 1 0 % 1 0 % 5 0 % 5 0 % p u l s e w i d t h i n v e r t e d t d ( o n ) 9 0 % 9 0 % t r t o n 9 0 % 1 0 % t o f f t d ( o f f ) t f 9 0 % figure 2:switching waveforms r g e n v i n g v d d r l v o u t s d v g s figure1: switching test circuit r (t), normalized effective transient thermal impedance
suzhou goodark electronics co., ltd version 1.0 gd ssf 2301a sot - 23 package information dimensions in millimeters (unit:mm) symbol dimensions in millimeters min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0. 500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exc lude mold flash and gate burrs. mold flash at the non - lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
|
